semiconductor-models

Audit and improve MOSFET, IGBT, and diode models in a C++ power electronics simulator.

Updated Apr 7, 2026
One-click install
npx skills add https://github.com/lgili/skillex --skill semiconductor-models
Or copy as Structured Prompt for Agent
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Skill: semiconductor-models
Source: https://github.com/lgili/skillex/tree/main/skills/semiconductor-models
Command: npx skills add https://github.com/lgili/skillex --skill semiconductor-models

SYSTEM DOCUMENTATION & REQUIREMENTS

💡 This Skill includes references (resource) components.

What problem does it solve?

Audits, improves, and validates semiconductor device models (MOSFET, IGBT, diode) used in a C++ power-electronics simulator, ensuring their parameters and behavior match datasheet references and measurement data so simulations yield reliable switching and conduction predictions.

Core Features & Use Cases

  • Audit existing models for accuracy and completeness, identify gaps such as Rds_on, C_oss nonlinearity, and reverse recovery.
  • Propose improvements with traceable datasheet references, integrate validated changes into converter simulations, and document validation methodologies.
  • Use cases include evaluating model fidelity for hard-switched and soft-switched converter topologies, and aligning E_on/E_off predictions with datasheet curves.

Quick Start

Audit the MOSFET, IGBT, and diode models in the codebase and propose validated improvements against datasheet references.

Frequently Asked Questions about semiconductor-models

High-intent search queries and answers about installing and using this skill.

FAQPage Schema
How do I validate MOSFET and IGBT models against datasheet parameters in a C++ power electronics simulator?

Diode reverse recovery modeling captures charge removal behavior during switching transitions to predict E_on and E_off losses accurately. It requires validating reverse recovery parameters against measurement data across hard-switched and soft-switched topologies to ensure simulator predictions align with real device behavior.

What's the best way to fix inaccurate switching loss predictions in a power electronics simulator?

Power semiconductor model auditing requires a C++ simulator codebase containing MOSFET, IGBT, and diode models, plus accessible datasheets or measurement data for parameter extraction. No external dependencies are needed, but you must map every parameter to a datasheet page or measurement file to maintain traceability.

How does Coss nonlinearity affect MOSFET switching simulations?

Coss nonlinearity affects MOSFET switching simulations by causing voltage-dependent capacitance changes that alter switching transition speeds and E_off energy loss predictions. Accurate models must capture this nonlinearity by fitting capacitance curves from datasheets and validating the behavior across different switching scenarios.

Why do my IGBT conduction loss simulations diverge from datasheet curves?

IGBT conduction loss simulations diverge from datasheet curves when model parameters lack proper temperature dependency updates or fail to trace back to accurate datasheet extraction points. Auditing the model for missing thermal coefficients and re-validating against measurement data realigns the conduction behavior predictions.